M5M5V216ATP-55H Ver la hoja de datos (PDF) - Mitsumi
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M5M5V216ATP-55H Datasheet PDF : 7 Pages
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revision-01, ' 98.12.08
M5M5V216ATP,RT
MITSUBISHI LSIs
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
FUNCTION
The M5M5V216ATP,RT is organized as 131,072-words by
16-bit. These devices operate on a single +2.7~3.6V power
supply, and are directly TTL compatible to both input and
output. Its fully static circuit needs no clocks and no
refresh, and makes it useful.
The operation mode are determined by a combination of
the device control inputs BC1 , BC2 , S , W and OE.
Each mode is summarized in the function table.
A write operation is executed whenever the low level W
overlaps with the low level BC1 and/or BC2 and the low
level S. The address(A0~A16) must be set up before the
write cycle and must be stable during the entire cycle.
A read operation is executed by setting W at a high level
and OE at a low level while BC1 and/or BC2 and S are in
an active state(S=L).
When setting BC1 at the high level and other pins are in
an active stage , upper-byte are in a selesctable mode in
which both reading and writing are enabled, and lower-byte
are in a non-selectable mode. And when setting BC2 at a
high level and other pins are in an active stage, lower-
byte are in a selectable mode and upper-byte are in a
non-selectable mode.
BLOCK DIAGRAM
When setting BC1 and BC2 at a high level or S at a high
level, the chips are in a non-selectable mode in which both
reading and writing are disabled. In this mode, the output
stage is in a high-impedance state, allowing OR-tie with
other chips and memory expansion by BC1, BC2 and S.
The power supply current is reduced as low as 0.3µA(25 C,
typical), and the memory data can be held at +2V power
supply, enabling battery back-up operation during power
failure or power-down operation in the non-selected mode.
FUNCTION TABLE
S BC1 BC2 W OE Mode DQ1~8 DQ9~16 Icc
H X X X X Non selection High-Z High-Z Standby
L H H X X Non selection High-Z High-Z Standby
L L H L X Write Din High-Z Active
L L H H L Read Dout High-Z Active
L L H HH
High-Z High-Z Active
L H L L X Write High-Z Din Active
L H L H L Read High-Z Dout Active
L H L HH
High-Z High-Z Active
L L L L X Write Din Din Active
L L L H L Read Dout Dout Active
L L L HH
High-Z High-Z Active
A0
DQ
1
A1
MEMORY ARRAY
DQ
8
131072 WORDS
x 16 BITS
A15
-
DQ
9
A16
CLOCK
GENERATOR
DQ
16
S
BC1
BC2
W
OE
Vcc
GND
MITSUBISHI ELECTRIC
2
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