M5M54R16AJ Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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M5M54R16AJ Datasheet PDF : 7 Pages
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MITSUBISHI LSIs
M5M54R16AJ,ATP-10,-12,-15
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
READ CYCLE
Symbol
tCR
ta(A)
ta(S)
ta(OE)
ta(B)
tdis(S)
tdis(OE)
tdis(B)
ten(S)
ten(OE)
ten(B)
tv(A)
tPU
tPD
Parameter
Read cycle time
Address access time
Chip select access time
Output enable access time
LB,UB access time
Output disable time after S high
Output disable time after OE high
Output disable time after LB,UB high
Output enable time after S low
Output enable time after OE low
Output enable time after LB,UB low
Data valid time after address change
Power-up time after chip selection
Power-down time after chip selection
Limits
M5M54R16AJ,ATP-10 M5M54R16AJ,ATP-12M5M54R16AJ,ATP-15 Unit
Min
Max
Min
Max
Min
Max
10
12
15
ns
10
12
15 ns
10
12
15 ns
5
6
7 ns
5
6
7 ns
0
5
0
6
0
7 ns
0
5
0
6
0
7 ns
0
5
0
6
0
7 ns
2
3
3
ns
0
1
1
ns
0
1
1
ns
2
3
3
ns
0
0
0
ns
10
12
15 ns
Write cycle
Symbol
Parameter
tCW
tw(W)
tw(W)
tsu(B)
tsu(A)1
tsu(A)2
tsu(S)
tsu(D)
th(D)
trec(W)
tdis(W)
tdis(OE)
ten(W)
ten(OE)
ten(B)
tsu(A-WH)
tsu(A-SH)
tsu(A-BH)
Write cycle time
Write pulse width (OE low)
Write pulse width(OE high)
LB,UB setup time
Address setup time(W)
Address setup time(S)
Chip select setup time
Data setup time
Data hold time
Write recovery time
Output disable time after W low
Output disable time after OE high
Output enable time after W high
Output enable time after OE low
Output enable time after LB,UB low
Address to W High
Address to S High
Address to LB,UB High
Limits
M5M54R16AJ,ATP-10 M5M54R16AJ,ATP-12 M5M54R16AJ,ATP-15 Unit
Min
Max
Min
Max
Min
Max
10
12
15
ns
10
12
15
ns
8
10
10
ns
8
10
10
ns
0
0
0
ns
0
0
0
ns
8
10
10
ns
5
6
7
ns
0
0
0
ns
1
1
1
ns
0
5
0
6
0
7 ns
0
5
0
6
0
7 ns
0
0
0
ns
0
0
0
ns
0
0
0
ns
8
10
10
ns
8
10
10
ns
8
10
10
ns
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ELECTRIC
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