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M59DR032EA Ver la hoja de datos (PDF) - STMicroelectronics

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M59DR032EA Datasheet PDF : 43 Pages
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M59DR032EA, M59DR032EB
SIGNAL DESCRIPTIONS
See Figure 2, Logic Diagram, and Table 1, Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A20). The Address Inputs
select the cells in the memory array to access dur-
ing Bus Read operations. During Bus Write opera-
tions they control the commands sent to the
Command Interface of the internal state machine.
During a write operation the address inputs are
latched on the falling edge of Chip Enable E or
Write Enable W, whichever occurs last.
Data Input/Output (DQ0-DQ15). The Data I/O
output the data stored at the selected address dur-
ing a Bus Read operation or input a command or
the data to be programmed during a Write Bus op-
eration.
Both input data and commands are latched on the
rising edge of Write Enable W. The data output is
the Memory Array, the Common Flash Interface,
the Electronic Signature Manufacturer or Device
codes, the Block Protection status, the Configura-
tion Register status or the Status Register Data
depending on the address.
The data bus is high impedance when the chip is
deselected, Output Enable G is at VIH, or RP is at
VIL.
Chip Enable (E). The Chip Enable input acti-
vates the memory control logic, input buffers, de-
coders and sense amplifiers. When Chip Enable is
at VIH the device is deselected and the power con-
sumption is reduced to the standby level.
Output Enable (G). The Output Enable gates the
outputs through the data buffers during a read op-
eration. When Output Enable is at VIH the outputs
are high impedance.
Write Enable (W). The Write Enable controls the
Bus Write operation of the memory’s Command
Interface.
Write Protect (WP). Write Protect is an input
that gives an additional hardware protection for
each block. When Write Protect is at VIL, the
locked-down blocks cannot be locked or unlocked.
When Write Protect is at VIH, the Lock-Down is
disabled and the locked-down blocks can be
locked or unlocked. (refer to Table 10, Lock Sta-
tus).
Reset/Power-Down Input (RP). The Reset/Pow-
er-Down input provides hardware reset of the
memory, and/or Power-Down functions, depend-
ing on the Configuration Register status. A Reset
or Power-Down of the memory is achieved by pull-
ing RP to VIL for at least tPLPH.
The Reset/Power-Down function is set in the Con-
figuration Register (see Set Configuration Regis-
ter command). If it is set to ‘0’ the Reset function is
enabled, if it is set to ‘1’ the Power-Down function
is enabled. After a Reset or Power-Up the power
save function is disabled and all blocks are locked.
The memory Command Interface is reset on Pow-
er Up to Read Array. Either Chip Enable or Write
Enable must be tied to VIH during Power Up to al-
low maximum security and the possibility to write a
command on the first rising edge of Write Enable.
After a Reset, when the device is in Read, Erase
Suspend Read or Standby, valid data will be out-
put tPHQ7V1 after the rising edge of RP. If the de-
vice is in Erase or Program, the operation will be
aborted and the reset recovery will take a maxi-
mum of tPLQ7V. The memory will recover from
Power-Down tPHQ7V2 after the rising edge of RP.
See Tables 17, 18 and Figure 11.
VDD and VDDQ Supply Voltage (1.65V to 2.2V).
VDD provides the power supply to the internal core
of the memory device. It is the main power supply
for all operations (read, program and erase).
VDDQ provides the power supply to the I/O pins.
VDD and VDDQ must be at the same voltage.
VPP Programming Voltage (11.4V to 12.6V). VPP
provides a high voltage power supply for fast fac-
tory programming. VPP is required to use the Dou-
ble Word and Quadruple Word Program
commands.
VSS Ground. VSS ground is the reference for the
core supply. It must be connected to the system
ground.
Note: Each device in a system should have
VDD, VDDQ and VPP decoupled with a 0.1µF ca-
pacitor close to the pin. See Figure 6, AC Mea-
surement Load Circuit. The PCB trace widths
should be sufficient to carry the required VPP
program and erase currents.
8/43

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