M59DR032EB Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
M59DR032EB Datasheet PDF : 43 Pages
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M59DR032EA, M59DR032EB
Table 8. Read Protection Register
Word
E GW
A20-A8
Lock
VIL VIL VIH
X
Unique ID 0 VIL VIL VIH
X
Unique ID 1 VIL VIL VIH
X
Unique ID 2 VIL VIL VIH
X
Unique ID 3 VIL VIL VIH
X
OTP 0
VIL VIL VIH
X
OTP 1
VIL VIL VIH
X
OTP 2
VIL VIL VIH
X
OTP 3
VIL VIL VIH
X
Note: X= Don’t care.
A7-0
80h
81h
82h
83h
84h
85h
86h
87h
88h
DQ15-8 DQ7-3
DQ2
DQ1
XXh
00000b
Security
prot.data
OTP
prot.data
ID data ID data ID data ID data
ID data ID data ID data ID data
ID data ID data ID data ID data
ID data ID data ID data ID data
OTP data OTP data OTP data OTP data
OTP data OTP data OTP data OTP data
OTP data OTP data OTP data OTP data
OTP data OTP data OTP data OTP data
DQ0
0
ID data
ID data
ID data
ID data
OTP data
OTP data
OTP data
OTP data
Table 9. Program, Erase Times and Program, Erase Endurance Cycles
Parameter
M59DR032E
Min
Max
Typ
Typical after
Unit
100k W/E Cycles
Parameter Block (4 KWord) Erase (Preprogrammed)
2.5
0.3
1
s
Main Block (32 KWord) Erase (Preprogrammed)
4
0.8
3
s
Bank Erase (Preprogrammed, Bank A)
3
6
s
Bank Erase (Preprogrammed, Bank B)
20
30
s
Chip Program (1)
20
25
s
Chip Program (Double Word, VPP = 12V) (1)
8
s
Word Program (2)
100
10
µs
Double Word Program (VPP = 12V)
100
8
µs
Quadruple Word Program (VPP = 12V)
100
8
µs
Program/Erase Cycles (per Block)
100,000
cycles
Note: 1. Excludes the time needed to execute the sequence for program command.
2. Same timing value if VPP = 12V
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