M59DR016 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

M59DR016

16 Mbit (1Mb x16, Dual Bank, Page) 1.8V Supply Flash Memory

STMicroelectronics 

M59DR016C

M59DR016D

16 Mbit (1Mb x16, Dual Bank, Page)

1.8V Supply Flash Memory

PRODUCT PREVIEW

s SUPPLY VOLTAGE

– VDD = VDDQ = 1.65V to 2.2V for Program,

Erase and Read

– VPP = 12V for fast Program (optional)

s ASYNCHRONOUS PAGE MODE READ

– Page Width: 4 words

– Page Access: 35ns

– Random Access: 100ns

s PROGRAMMING TIME

– 10µs by Word typical

– Double Word Programming Option

s MEMORY BLOCKS

– Dual Bank Memory Array: 4 Mbit - 12 Mbit

– Parameter Blocks (Top or Bottom location)

s DUAL BANK OPERATIONS

– Read within one Bank while Program or

Erase within the other

– No delay between Read and Write operations

s BLOCK PROTECTION/UNPROTECTION

– All Blocks protected at Power Up

– Any combination of Blocks can be protected

s COMMON FLASH INTERFACE (CFI)

s 64 bit SECURITY CODE

s ERASE SUSPEND and RESUME MODES

s 100,000 PROGRAM/ERASE CYCLES per

BLOCK

s ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M59DR016C: 2293h

– Bottom Device Code, M59DR016D: 2294h

BGA

TFBGA48 (ZB)

8 x 6 balls array

Figure 1. Logic Diagram

VDD VDDQ VPP

20

A0-A19

16

DQ0-DQ15

W

E

M59DR016C

G

M59DR016D

RP

WP

VSS

AI04106

March 2001

This is preliminary information on a new product now in development. Details are subject to change without notice.

1/37

Share Link: