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M58WR064FB80ZB6T

64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M58WR064FT

M58WR064FB

64 Mbit (4Mb x16, Multiple Bank, Burst)

1.8V Supply Flash Memory

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDD = 1.7V to 2V for Program, Erase and

Read

– VDDQ = 1.7V to 2.24V for I/O Buffers

– VPP = 12V for fast Program (optional)

■ SYNCHRONOUS / ASYNCHRONOUS READ

– Synchronous Burst Read mode: 66MHz

– Asynchronous/ Synchronous Page Read

mode

– Random Access: 60ns, 70ns, 80ns

■ SYNCHRONOUS BURST READ SUSPEND

■ PROGRAMMING TIME

– 8µs by Word typical for Fast Factory

Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

■ MEMORY BLOCKS

– Multiple Bank Memory Array: 4 Mbit

Banks

– Parameter Blocks (Top or Bottom

location)

■ DUAL OPERATIONS

– Program Erase in one Bank while Read in

others

– No delay between Read and Write

operations

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device number

■ COMMON FLASH INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

Figure 1. Package

FBGA

VFBGA56 (ZB)

7.7 x 9 mm

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Codes:

M58WR064FT (Top): 8810h

M58WR064FB (Bottom): 8811h

■ PACKAGE

– Compliant with Lead-Free Soldering

Processes

– Lead-Free Versions

October 2004

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