M45PE80(2004) Ver la hoja de datos (PDF) - STMicroelectronics

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M45PE80
(Rev.:2004)

8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

STMicroelectronics 

M45PE80

MEMORY ORGANIZATION

The memory is organized as:

■ 4096 pages (256 bytes each).

■ 1,048,576 bytes (8 bits each)

■ 16 sectors (512 Kbits, 65536 bytes each)

Each page can be individually:

– programmed (bits are programmed from 1 to

0)

– erased (bits are erased from 0 to 1)

– written (bits are changed to either 0 or 1)

The device is Page or Sector Erasable (bits are

erased from 0 to 1).

Table 3. Memory Organization

Sector

Address Range

15

F0000h

FFFFFh

14

E0000h

EFFFFh

13

D0000h

DFFFFh

12

C0000h

CFFFFh

11

B0000h

BFFFFh

10

A0000h

AFFFFh

9

90000h

9FFFFh

8

80000h

8FFFFh

7

70000h

7FFFFh

6

60000h

6FFFFh

5

50000h

5FFFFh

4

40000h

4FFFFh

3

30000h

3FFFFh

2

20000h

2FFFFh

1

10000h

1FFFFh

0

00000h

0FFFFh

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