DS1112SG Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DS1112SG

Rectifier Diode

Dynex Semiconductor 

DS1112SG

CHARACTERISTICS

Symbol

Parameter

VFM

Forward voltage

IRM

Peak reverse current

QS

Total stored charge

Irr

Reverse recovery current

V

Threshold voltage

TO

r

Slope resistance

T

CURVES

2500

Measured under pulse

conditions

2000

1500

1000

Tj = 25˚C

Tj = 150˚C

Conditions

At 1800A peak, Tcase = 25oC

At VRRM, Tcase = 150oC

IF = 1000A, dIRR/dt = 3A/µs

T = 150˚C, V = 100V

case

R

At T = 150˚C

vj

At T = 150˚C

vj

Min. Max. Units

-

2.1

V

-

75 mA

- 3000 µC

-

90

A

-

0.9

V

-

0.93 mΩ

2500

2000

1500

dc

Half wave

3 phase

1000

500

500

0

0

0.5

1.5

2.5

3.5

0

Instantaneous forward voltage, VF - (V)

500

1000

1500

Mean forward current, IF(AV) - (A)

2000

Fig.2 Maximum (limit) forward characteristics

Fig.3 Dissipation curves

VFM Equation:-

VFM = A + Bln (IF) + C.IF+D.√IF

Where

A = 1.249986

B = –0.17646

C = 0.000524

D = 0.041024

these values are valid for Tj = 125˚C for IF 500A to 2500A

4/7

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