DSF11060SG58 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DSF11060SG58 Datasheet PDF : 6 Pages
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DSF11060SG
CURVES
10000
1000
IF
50µs
QS = 0
tp = 1ms
dIR/dt
QS
IRR
Conditions:
Tj = 125˚C,
VR = 100V
A
B
C
D
E
1000
Conditions:
Tj = 125˚C,
VR = 100V
100
A
B
C
D
E
100
1
A: IF = 2000A
B: IF = 1000A
C: IF = 500A
D: IF = 200A
E: IF = 100A
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.2 Recovered charge
0.100
d.c. Double side cooled
A: IF = 2000A
B: IF = 1000A
C: IF = 500A
D: IF = 200A
10
E: IF = 100A
1
10
100
1000
Rate of rise of reverse current dIR/dt - (A/µs)
Fig.3 Typical reverse recovery current vs rate of rise of
forward current
0.010
0.001
0.01
0.1
1
10
100
Time - (s)
Fig.4 Maximum (limit) transient thermal impedance -
junction to case - (˚C/W)
4/6
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