DSF11060SG Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DSF11060SG

Fast Recovery Diode

Dynex Semiconductor 

CHARACTERISTICS

Symbol

Parameter

V

FM

IRRM

trr

QRA1

IRM

K

Forward voltage

Peak reverse current

Reverse recovery time

Recovered charge (50% chord)

Reverse recovery current

Soft factor

V

TO

Threshold voltage

rT

Slope resistance

VFRM

Forward recovery voltage

Conditions

At 600A peak, T = 25oC

case

At V , T = 125oC

RRM case

I

F

=

1000A,

di /dt

RR

=

100A/µs

T = 125oC, V = 100V

case

R

At Tvj = 125oC

At Tvj = 125oC

di/dt = 1000A/µs, Tj = 100oC

DEFINITION OF K FACTOR AND QRA1

dIR/dt

t1

0.5x IRR

IRR

QRA1 = 0.5x IRR(t1 + t2)

t2 k = t1/t2

τ

DSF11060SG

Typ. Max. Units

-

3.8

V

-

70 mA

6.0

-

µs

- 1000 µC

350

-

A

1.7

-

-

-

1.5

V

-

2.9 mΩ

-

400

V

3/6

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