DSF11060SG56 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DSF11060SG56

Fast Recovery Diode

Dynex Semiconductor 

DSF11060SG

CURRENT RATINGS

Symbol

Parameter

Double Side Cooled

IF(AV)

I

F(RMS)

Mean forward current

RMS value

IF

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

IF(RMS)

IF

Mean forward current

RMS value

Continuous (direct) forward current

SURGE RATINGS

Symbol

Parameter

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

Conditions

Half wave resistive load, Tcase = 65oC

Tcase = 65oC

T = 65oC

case

Half wave resistive load, Tcase = 65oC

Tcase = 65oC

Tcase = 65oC

Conditions

10ms half sine; with 0% VRRM, Tj = 150oC

10ms half sine; with 50% V T = 150oC

RRM, j

Max. Units

400

A

631

A

585

A

265

A

420

A

365

A

Max. Units

4.2

kA

88 x 103 A2s

3.4

kA

57.8 x 103 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c) Thermal resistance - junction to case

Rth(c-h) Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 12kN

with mounting compound

Double side

Single side

Forward (conducting)

Min. Max. Units

- 0.032 oC/W

- 0.064 oC/W

- 0.064 oC/W

- 0.008 oC/W

- 0.016 oC/W

-

135

oC

-55 125

oC

10.8 13.2 kN

2/6

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