DSF11060SG55(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DSF11060SG55
(Rev.:2000)

Fast Recovery Diode

Dynex Semiconductor 

DSF11060SG

PACKAGE DETAILS

(Alternative outline G includes gate connections, all other details are the same as M779b).

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.

DO NOT SCALE.

2 holes Ø3.6x2.0 deep (in both electrodes)

Cathode

Ø58.5 max

Ø34 nom

Ø34 nom

Anode

Nominal weight: 310g

Clamping force: 12kN ±10%

Package outine type code: M779b

ASSOCIATED PUBLICATIONS

Title

Calculating the junction temperature or power semiconductors

Recommendations for clamping power semiconductors

Thyristor and diode measurement with a multi-meter

Use of V , r on-state characteristic

TO T

Application Note

Number

AN4506

AN4839

AN4853

AN5001

5/6

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