DSF11060SG60(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DSF11060SG60
(Rev.:2000)

Fast Recovery Diode

Dynex Semiconductor 

DSF11060SG

10000

Conditions:

Tj = 125˚C,

VR = 100V

1000

A

B

C

D

E

100

A: IF = 2000A

B: IF = 1000A

C: IF = 500A

D: IF = 200A

10

E: IF = 100A

1

10

100

1000

Rate of rise of reverse current dIR/dt - (A/µs)

Fig. 5 typical reverse recovery current vs rate of rise of reverse current

0.100

d.c. Double side cooled

0.010

0.001

0.01

0.1

1

10

100

Time - (s)

Fig. 3 Maximum (limit) transient thermal impedance - junction to case - (˚CW)

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