DSF11060SG60(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

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DSF11060SG60
(Rev.:2000)

Fast Recovery Diode

Dynex Semiconductor 

DEFINITION OF K FACTOR AND QRA1

dIR/dt

t1

0.5x IRR

IRR

QRA1 = 0.5x IRR(t1 + t2)

t2 k = t1/t2

τ

DSF11060SG

CURVES

100000

10000

IF

∫ 50µs

QS = 0

tp = 1ms

dIR/dt

QS

IRR

Conditions:

Tj = 125˚C,

VR = 100V

1000

100

1

A

B

C

D

E

A: IF = 2000A

B: IF = 1000A

C: IF = 500A

D: IF = 200A

E: IF = 100A

10

100

Rate of rise of reverse current dIR/dt - (A/µs)

1000

Fig. 1 Recovered charge

3/6

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