DSF11060SG55(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor
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DSF11060SG55 Datasheet PDF : 6 Pages
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DSF11060SG
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I2t
I2t for fusing
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
Conditions
10ms half sine; with 0% VRRM, Tj = 150oC
10ms half sine; with 50% VRRM, Tj = 150oC
Max. Units
4.2
kA
88 x 103 A2s
3.4
kA
57.8 x 103 A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c) Thermal resistance - junction to case
Rth(c-h) Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Clamping force
Conditions
Double side cooled
Single side cooled
Clamping force 12kN
with mounting compound
dc
Anode dc
Cathode dc
Double side
Single side
Forward (conducting)
Min. Max. Units
- 0.032 oC/W
- 0.064 oC/W
- 0.064 oC/W
- 0.008 oC/W
- 0.016 oC/W
-
135
oC
-55 125
oC
10.8 13.2 kN
CHARACTERISTICS
Symbol
Parameter
V
Forward voltage
FM
IRRM
Peak reverse current
trr
Reverse recovery time
QRA1
Recovered charge (50% chord)
IRM
Reverse recovery current
K
Soft factor
VTO
rT
V
FRM
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
At 600A peak, T = 25oC
case
At V , T = 125oC
RRM case
I
F
=
1000A,
di /dt
RR
=
100A/µs
T = 125oC, V = 100V
case
R
At Tvj = 125oC
At Tvj = 125oC
di/dt = 1000A/µs, Tj = 100oC
Typ. Max. Units
-
3.8
V
-
70 mA
6.0
-
µs
- 1000 µC
350
-
A
1.7
-
-
-
1.5
V
-
2.9 mΩ
-
400
V
2/6
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