M36W0R6030B0 Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción

Fabricante

M36W0R6030B0

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

STMicroelectronics 

M36W0R6030T0, M36W0R6030B0

Table 9. Read AC Characteristics

Symbol Alt

Parameter

M36W0R6030T0, M36W0R6030B0

Unit

Min

Max

tAVAV

tE1LE1H

tE2HE2L

tRC Read Cycle Time

70

ns

tAVQV

tAA Address Valid to Output Valid

70

ns

tAVQX tOHA Address Transition to Output Transition

10

ns

tBHQZ(2) tHZBE Byte Enable High to Data Hi-Z

25

ns

tBLQV tDBE Byte Enable Low to Data Valid

70

ns

tBLQX(2) tLZBE Byte Enable Low to Data Transition

5

ns

tE1HQZ

tE2LQZ

tHZCE

Chip Enable 1 High or Chip Enable 2 Low to Data

Hi-Z

25

ns

tE1LQV

tE2HQV

tACE

Chip Enable 1 Low or Chip Enable 2 High to Data

Valid

70

ns

tE1LQX

tE2HQX

tLZCE

Chip Enable 1 Low or Chip Enable 2 High to Data

Transition

10

ns

tGHQZ tHZOE Output Enable High to Data Hi-Z

25

ns

tGLQV tDOE Output Enable Low to Data Valid

35

ns

tGLQX tLZOE Output Enable Low to Data Transition

5

ns

tPD(1)

Chip Enable 1 High or Chip Enable 2 Low to

Power Down

70

ns

tPU(1)

Chip Enable 1 Low or Chip Enable 2 High to

Power Up

0

ns

Note: 1. Sampled only. Not 100% tested.

2. Whatever the temperature and voltage, tE1HDZ and tE2LDZ are less than tE1LDX and tE2HDX; tBHDZ is less than tBLDX and, tGHDZ is

less than tGHDX.

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