M36W0R6030B0 Ver la hoja de datos (PDF) - STMicroelectronics

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M36W0R6030B0

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

STMicroelectronics 

M36W0R6030T0, M36W0R6030B0

Table 7. Flash Memory DC Characteristics - Voltages

Symbol

Parameter

Test Condition

VIL Input Low Voltage

VIH Input High Voltage

VOL Output Low Voltage

IOL = 100µA

VOH Output High Voltage

IOH = –100µA

VPP1 VPP Program Voltage-Logic

Program, Erase

VPPH VPP Program Voltage Factory

Program, Erase

VPPLK Program or Erase Lockout

VLKO VDD Lock Voltage

VRPH RP pin Extended High Voltage

Min

Typ

Max

Unit

–0.5

0.4

V

VDDQ –0.4

VDDQ + 0.4 V

0.1

V

VDDQ –0.1

V

1.1

1.8

3.3

V

11.4

12

12.6

V

0.4

V

1

V

3.3

V

Table 8. SRAM DC Characteristics

Symbol Parameter

Test Condition

ILI

Input Leakage

Current

0V ≤ VIN ≤ VDD

ILO

Output Leakage

Current

0V ≤ VOUT ≤ VDD, Output disabled

IDDS

VDD Standby

Current

E1S ≥ VDD – 0.2V or E2S ≤ 0.2V

VIN ≥ VDD – 0.2V or VIN ≤ 0.2V

f = fmax (Address and Data inputs only)

f = 0 (GS, WS, UBS and LBS)

E1S ≥ VDD – 0.2V or E2S ≤ 0.2V

VIN ≥ VDD – 0.2V or VIN ≤ 0.2V

f = 0, VDD(max)

IDD Supply Current

f = fmax = 1/tAVAV, CMOS levels VDD = VDD(max)

IOUT = 0 mA, f = 1MHz, CMOS levels

VIL

Input Low

Voltage

VIH

Input High

Voltage

VOL

Output Low

Voltage

IOL = 0.1mA, VDD = 1.65V

VOH

Output High

Voltage

IOH = −0.1mA, VDD = 1.65V

Min Typ

Max Unit

±1

µA

±1

µA

2

25

µA

2

25

µA

8

1

–0.2

15 mA

5

mA

0.4

V

1.4

VDD+0.2 V

0.2

V

1.4

V

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