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M36DR432C Ver la hoja de datos (PDF) - STMicroelectronics

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M36DR432C Datasheet PDF : 46 Pages
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M36DR432C, M36DR432D
Table 26. Flash Write AC Characteristics, Write Enable Controlled
(TA = –40 to 85 °C; VDDF = 1.9V to 2.1V
Flash
Symbol
Alt
Parameter
85
100
Min Max Min Max
tAVAV
tWC Address Valid to Next Address Valid
85
100
tAVWL
tAS Address Valid to Write Enable Low
0
0
tDVWH
tDS Input Valid to Write Enable High
50
50
tELWL
tCS Chip Enable Low to Write Enable Low
0
0
tGHWL
Output Enable High to Write Enable Low
0
0
tPLQ7V
RPF Low to Reset Complete During Program/Erase
15
15
tVDHEL
tVCS VDDF High to Chip Enable Low
50
50
tWHDX
tDH Write Enable High to Input Transition
0
0
tWHEH
tCH Write Enable High to Chip Enable High
0
0
tWHGL
tOEH Write Enable High to Output Enable Low
0(1)
0(1)
tWHWL
tWPH Write Enable High to Write Enable Low
30
30
tWLAX
tAH Write Enable Low to Address Transition
50
50
tWLWH
tWP Write Enable Low to Write Enable High
50
50
Note: 1. Following a Write cycle, if the next Read is in the same bank as the Write then tWHGL is 30ns.
Unit
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
Figure 9. Flash Write AC Waveforms, WF Controlled
A0-A20
EF
GF
WF
DQ0-DQ15
tAVWL
tELWL
tGHWL
tAVAV
VALID
tWLAX
tWHEH
tWHGL
tWLWH
tDVWH
VALID
tWHWL
tWHDX
VDDF
tVDHEL
Note: 1. Address are latched on the falling edge of WF, Data is latched on the rising edge of WF.
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