M36DR432C Ver la hoja de datos (PDF) - STMicroelectronics

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M36DR432C

32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36DR432C, M36DR432D

Table 21. Device Geometry Definition

Offset Word

Mode

Data

Description

27h

0016h Device Size = 2n in number of bytes

28h

0001h

Flash Device Interface Code description: Asynchronous x16

29h

0000h

2Ah

0000h

Maximum number of bytes in multi-byte program or page = 2n

2Bh

0000h

2Ch

0002h Number of Erase Block Regions within device

bit 7 to 0 = x = number of Erase Block Regions

Note:1. x = 0 means no erase blocking, i.e. the device erases at once in "bulk."

2. x specifies the number of regions within the device containing one or more con-

tiguous Erase Blocks of the same size. For example, a 128KB device (1Mb)

having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is considered

to have 5 Erase Block Regions. Even though two regions both contain 16KB

blocks, the fact that they are not contiguous means they are separate Erase

Block Regions.

3. By definition, symmetrically block devices have only one blocking region.

M36DR432C M36DR432C Erase Block Region Information

2Dh

003Eh bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes in

2Eh

0000h

size. The value z = 0 is used for 128 byte block size.

e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K

2Fh

0000h

bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase

30h

0001h

Block Region:

31h

0007h

e.g. y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]

y = 0 means no blocking (# blocks = y+1 = "1 block")

32h

0000h Note: y = 0 value must be used with number of block regions of one as indicated

by (x) = 0

33h

0020h

34h

0000h

M36DR432D M36DR432D

2Dh

0007h

2Eh

0000h

2Fh

0020h

30h

0000h

31h

003Eh

32h

0000h

33h

0000h

34h

0001h

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