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M29W640FB

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

M29W640FT

M29W640FB

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)

3V Supply Flash Memory

Features summary

Supply Voltage

– VCC = 2.7V to 3.6V for Program, Erase,

Read

– VPP =12 V for Fast Program (optional)

Asynchronous Random/Page Read

– Page Width: 4 Words

– Page Access: 25ns

– Random Access: 60ns, 70ns

Programming Time

– 10 µs per Byte/Word typical

– 4 Words/8 Bytes Program

135 memory blocks

– 1 Boot Block and 7 Parameter Blocks,

8 KBytes each (Top or Bottom Location)

– 127 Main Blocks, 64 KBytes each

Program/Erase Controller

– Embedded Byte/Word Program algorithms

Program/Erase Suspend and Resume

– Read from any Block during Program

Suspend

– Read and Program another Block during

Erase Suspend

Unlock Bypass Program command

– Faster Production/Batch Programming

VPP/WP pin for Fast Program and Write Protect

Temporary Block Unprotection mode

Common Flash Interface

– 64-bit Security Code

Extended Memory Block

– Extra block used as security block or to

store additional information

Low power consumption

– Standby and Automatic Standby

100,000 Program/Erase cycles per block

Figure 1. Packages

TSOP48 (N)

12 x 20mm

FBGA

TFBGA48 (ZA)

6x8mm

Electronic Signature

– Manufacturer Code: 0020h

Table 1. Device Codes

Root Part Number

M29W640FT

M29W640FB

Device Code

22EDh

22FDh

ECOPACK® packages

December 2005

Rev3

1/72

www.st.com

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