29W040 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
29W040 Datasheet PDF : 31 Pages
| |||
M29W040
Figure 2A. LCC Pin Connections
A7
A6
A5
A4
A3 9
A2
A1
A0
DQ0
1 32
M29W040
17
A14
A13
A8
A9
25 A11
G
A10
E
DQ7
AI02075
Figure 2B. TSOP Pin Connections
A11
A9
A8
A13
A14
A17
W
VCC
A18
A16
A15
A12
A7
A6
A5
A4
1
32
8 M29W040 25
9
(Normal) 24
16
17
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
AI02076
Figure 2C. TSOP Reverse Pin Connections
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
1
32
8 M29W040 25
9 (Reverse) 24
16
17
AI02077
A11
A9
A8
A13
A14
A17
W
VCC
A18
A16
A15
A12
A7
A6
A5
A4
2/31
DESCRIPTION
The M29W040 is a non-volatile memory that may
be erased electrically at the block level, and pro-
grammed Byte-by-Byte.
The interface is directly compatible with most mi-
croprocessors. PLCC32, TSOP32 (8 x 20mm)and
TSOP32 (8 x 14mm) packages are available. Both
normal and reverse pin outs are available for the
TSOP32 (8 x 20mm) package.
Organisation
The FlashMemory organisationis 512K x8 bits with
Address lines A0-A18 and Data Inputs/Outputs
DQ0-DQ7. Memory control is provided by Chip
Enable, Output Enable and Write Enable Inputs.
Erase and Program are performed through the
internal Program/Erase Controller (P/E.C.).
Data Outputs bits DQ7 and DQ6 provide polling or
toggle signals during Automatic Program or Erase
to indicate the Ready/Busy state of the internal
Program/Erase Controller.
Memory Blocks
Erasure of the memory is in blocks. There are 8
uniform blocks of 64 Kbytes each in the memory
address space. Each block can be programmed
and erased over 100,000 cycles. Each uniform
Share Link: 