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Fabricante

HYB514800BJ-70

512kx8-Bit Dynamic RAM

Infineon Technologies 

HYB 514800BJ -60/-70/-80

512k x 8 DRAM

AC Characteristics (cont’d)4)

TA = 0 to 70 ˚C; VCC = 5 V ± 10 %; tT = 5 ns

Parameter

Symbol

-60

min. max.

Data hold time 9)

tDH

15

–

Refresh period

tREF

–

16

Write command

tWCS

0

–

setup time 10)

CAS to WRITE delay tCWD

50

–

time 10)

RAS to WRITE delay tRWD

90

–

time 10)

Column address to tAWD

60

–

WRITE delay time 10)

CAS setup time (CBR tCSR

5

–

cycle)

CAS hold time (CBR tCHR

15

–

cycle)

RAS to CAS

tRPC

0

–

precharge time

CAS precharge time tCPT

30

–

(CAS before RAS

counter test cycle)

Write to RAS

precharge time

(CBR cycle)

tWRP

10

–

Write to RAS hold tWRH

10

–

time (CBR cycle)

OE command hold tOEH

20

–

time

OE acces time

tOEA

–

20

RAS hold time

tROH

10

–

referenced to OE

Output buffer turn-off tOEZ

0

20

delay from OE

Data to CAS low

tDZC

0

–

delay 14)

Limit Values

-70

min. max.

15

–

–

16

0

–

min.

15

–

0

-80

max.

–

16

–

50

–

50

–

100

–

110

–

65

–

70

–

5

–

5

–

15

–

15

–

0

–

0

–

40

–

40

–

10

–

10

–

10

–

10

–

20

–

20

–

–

20

–

20

10

–

10

–

0

20

0

20

0

–

0

–

Unit

ns

ms

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

Semiconductor Group

132

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