Q67100-Q850 Ver la hoja de datos (PDF) - Infineon Technologies
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Q67100-Q850 Datasheet PDF : 22 Pages
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HYB 514800BJ -60/-70/-80
512k x 8 DRAM
AC Characteristics 4)
TA = 0 to 70 ˚C; VCC = 5 V ± 10 %; tT = 5 ns
Parameter
Symbol
-60
min. max.
Random read or write tRC
time
110
–
Read-write cycle time tRWC
165
–
Fast page mode
tPC
45
–
cycle time
Fast page mode
tPRWC
100
–
read/write cycle time
Access time from
tRAC
–
60
RAS 6) 11)
Access time from
tCAC
–
20
CAS 6) 11)
Access time from
tAA
–
30
column address 6) 12)
Access time from
tCPA
–
40
CAS precharge 6)
CAS to output in
tCLZ
0
–
low-Z 6)
Output buffer turn-off tOFF
0
20
delay from CAS 7)
Transition time
tT
3
50
(rise and fall) 5)
RAS precharge time tRP
40
RAS pulse width
tRAS
60
RAS pulse width in tRASP
60
fast page mode
–
10000
200000
CAS pulse width
tCAS
20
RAS hold time
tRSH
20
CAS hold time
tCSH
60
RAS hold time from tRHCP
40
CAS precharge
(Fast page mode)
10000
–
–
–
CAS precharge to tCPWD 60
–
WRITE delay time
(FPM read-modify-write)
Limit Values
-70
min. max.
130
–
185
–
45
–
100
–
–
70
–
20
–
35
–
40
0
–
0
20
3
50
50
–
70
10000
70
200000
20
10000
20
–
70
–
45
–
65
–
min.
150
205
50
105
–
–
–
–
0
0
3
60
80
80
20
20
80
50
70
Unit
-80
max.
–
ns
–
ns
–
ns
–
ns
80
ns
20
ns
40
ns
45
ns
–
ns
20
ns
50
ns
–
ns
10000 ns
200000 ns
10000 ns
–
ns
–
ns
–
ns
–
ns
Semiconductor Group
130
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