Q67100-Q850 Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción

Fabricante

Q67100-Q850

512kx8-Bit Dynamic RAM

Infineon Technologies 

HYB 514800BJ -60/-70/-80

512k x 8 DRAM

DC Characteristics (cont’d)

TA = 0 to 70 ˚C, VSS = 0 V, VCC = 5 V ± 10 %, tT = 5 ns

Parameter

Symbol

Limit Values

min.

max.

Standby VCC supply current

(RAS = CAS = VCC – 0.2 V)

Average VCC supply current during

CAS before RAS refresh mode

-60 version

-70 version

-80 version

ICC5

–

1

ICC6

–

110

–

100

–

90

Unit Test

Condition

mA 1)

mA 2)

Semiconductor Group

129

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