Q67100-Q851 Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

Q67100-Q851

512kx8-Bit Dynamic RAM

Infineon Technologies 

512kx8-Bit Dynamic RAM

HYB 514800BJ -60/-70/-80

Advanced Information

• 512 288 words by 8-bit organization

• 0 to 70 ˚C operating temperature

• Fast access and cycle time

RAS access time:

60 ns (-60 version)

70 ns (-70 version)

80 ns (-80 version)

CAS access time:

20 ns

Cycle time:

110 ns (-60 version)

130 ns (-70 version)

150 ns (-80 version)

• Fast page mode cycle time

45 ns (-60 version)

45 ns (-70 version)

50 ns (-80 version)

• Single + 5 V (± 10 %) supply with a

built-in Vbb generator

Ordering Information

Type

HYB 514800BJ-60

Ordering Code

Q67100-Q849

HYB 514800BJ-70

Q67100-Q850

HYB 514800BJ-80

Q67100-Q851

• Low power dissipation

max. 605 mW active (-60 version)

max. 550 mW active (-70 version)

max. 468 mW active (-80 version)

• Standby power dissipation:

11 mW standby standby (TTL)

5.5 mW max.standby (CMOS)

• Output unlatched at cycle end allows two-

dimensional chip selection

• Read, write, read-modify write, CAS-before-

RAS refresh, RAS-only refresh, hidden

refresh, fast page mode capability

• All inputs and outputs TTL-compatible

• 1024 refresh cycles / 16 ms

• Plastic Packages: P-SOJ-28-2 400 mil width

Package

P-SOJ-28-2

P-SOJ-28-2

P-SOJ-28-2

Descriptions

DRAM

(access time 60 ns)

DRAM

(access time 70 ns)

DRAM

(access time 80 ns)

Semiconductor Group

125

01.95

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