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MT28F400B5VG-8T(Rev3) Ver la hoja de datos (PDF) - Micron Technology

Número de pieza
componentes Descripción
Fabricante
MT28F400B5VG-8T
(Rev.:Rev3)
Micron
Micron Technology Micron
MT28F400B5VG-8T Datasheet PDF : 32 Pages
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4Mb
SMART 5 BOOT BLOCK FLASH MEMORY
TRUTH TABLE (MT28F004B5)1
FUNCTION
RP# CE# OE# WE# WP# A0
Standby
H
H
X
X
X
X
RESET
L
X
X
X
X
X
READ
READ
H
L
L
H
X
X
Output Disable
H
L
H
H
X
X
WRITE/ERASE (EXCEPT BOOT BLOCK)2
ERASE SETUP
ERASE CONFIRM3
H
L
H
L
X
X
H
L
H
L
X
X
WRITE SETUP
H
L
H
L
X
X
WRITE4
H
L
H
L
X
X
READ ARRAY5
H
L
H
L
X
X
WRITE/ERASE (BOOT BLOCK)2
ERASE SETUP
ERASE CONFIRM3
ERASE CONFIRM3, 6
H
L
H
L
X
X
VHH
L
H
L
X
X
H
L
H
L
H
X
WRITE SETUP
WRITE4
WRITE4, 6
READ ARRAY5
DEVICE IDENTIFICATION7
H
L
H
L
X
X
VHH
L
H
L
X
X
H
L
H
L
H
X
H
L
H
L
X
X
Manufacturer Compatibility
H
L
L
H
X
L
Device (top boot)
H
L
L
H
X
H
Device (bottom boot)
H
L
L
H
X
H
A9
VPP
X
X
X
X
X
X
X
X
X
X
X
VPPH
X
X
X
VPPH
X
X
X
X
X
VPPH
X
VPPH
X
X
X
VPPH
X
VPPH
X
X
VID
X
VID
X
VID
X
Notes: 1. L = VIL, H = VIH, X = VIL or VIH.
2. VPPH = 5V.
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. When WP# = VIH, RP# may be at VIH or VHH.
7. A1–A8, A10–A18 = VIL.
DQ0–DQ7
High-Z
High-Z
Data-Out
High-Z
20h
D0h
10h/40h
Data-In
FFh
20h
D0h
D0h
10h/40h
Data-In
Data-In
FFh
89h
78h
79h
4Mb Smart 5 Boot Block Flash Memory
MT28F004B5_3.fm - Rev. 3, Pub. 8/2002
6
©2002, Micron Technology Inc.

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