M28C16-200K1T Ver la hoja de datos (PDF) - STMicroelectronics
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M28C16-200K1T
STMicroelectronics
M28C16-200K1T Datasheet PDF : 17 Pages
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M28LV16
Table 4. AC Measurement Conditions
Input Rise and Fall Times
≤ 20ns
Input Pulse Voltages
0V to VCC -0.3V
Input and Output Timing Ref.
Voltages
1.5V
Note that Output Hi-Z is defined as the point where data is no
longer driven.
Figure 7. AC Testing Input Output Waveforms
VCC –0.3V
0V
0.5 VCC
AI01274
Figure 8. AC Testing Equivalent Load Circuit
VCC
DEVICE
UNDER
TEST
1.3kΩ
1.8kΩ
OUT
CL = 100pF
CL includes JIG capacitance
AI01396
Table 5. Capacitance (1) (TA = 25 °C, f = 1 MHz )
Symbol
Parameter
Test Condition
CIN
Input Capacitance
COUT
Output Capacitance
Note: 1. Sampled only, not 100% tested.
VIN = 0V
VOUT = 0V
Min
Max
Unit
6
pF
12
pF
Table 6. Read Mode DC Characteristics
(TA = 0 to 70°C or –40 to 85°C; VCC = 2.7V to 3.6V)
Symbol
Parameter
Test Condition
Min
Max
Unit
ILI
Input Leakage Current
0V ≤ VIN ≤ VCC
10
µA
ILO Output Leakage Current
0V ≤ VIN ≤ VCC
10
µA
ICC (1)
Supply Current
(CMOS inputs)
E = VIL, G = VIL, f = 5 MHz, VCC = 3.3V
E = VIL, G = VIL, f = 5 MHz, VCC = 3.6V
8
mA
10
mA
ICC2 (1)
Supply Current (Standby)
CMOS
E > VCC –0.3V
50
µA
VIL
Input Low Voltage
– 0.3
0.6
V
VIH Input High Voltage
2
VCC +0.5
V
VOL Output Low Voltage
IOL = 1 mA
0.2 VCC
V
VOH Output High Voltage
Note: 1. All I/O’s open circuit.
IOH = 1 mA
0.8 VCC
V
Table 7. Power Up Timing (1) (TA = 0 to 70°C or –40 to 85°C; VCC = 2.7V to 3.6V)
Symbol
Parameter
Min
Max
Unit
tPUR
Time Delay to Read Operation
tPUW
Time Delay to Write Operation
VWI
Write Inhibit Threshold
Note: 1. Sampled only, not 100% tested.
1
µs
10
ms
1.5
2.5
V
6/17
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