AC CHARACTERISTICS WRITE CYCLE (Pre/Post-Radiation)*
(-55°C to +125°C for (C) screening and -40oC to +125oC for (E) screening) (VDD = 5.0V + 10%)
SYMBOL
PARAMETER
9 Q512-25
5.0V
MIN MAX
tAVAV1
Write cycle time
20
tETWH
Device Enable to end of write
20
tAVET
Address setup time for write (E - controlled)
0
tAVWL
Address setup time for write (W - controlled)
0
tWLWH
Write pulse width
20
tWHAX
Address hold time for write (W - controlled)
0
tEFAX
Address hold time for Device Enable (E - controlled)
0
tWLQZ2
W - controlled three-state time
10
tWHQX
W - controlled Output Enable time
5
tETEF
Device Enable pulse width (E - controlled)
20
tDVWH
Data setup time
15
tWHDX
Data hold time
2
tWLEF
Device Enable controlled write pulse width
20
tDVEF
Data setup time
15
tEFDX
Data hold time
2
tAVWH
Address valid to end of write
20
tW
H
W
1
L
Write disable time
5
Notes:
* Post-radiation performance guaranteed at 25 °C per MIL-STD-883 Method 1019.
1. Functional test performed with outputs disabled (G high).
2 . Three-state is defined as 500mV change from steady-state output voltage (see Figure 3).
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8