5962P9960602QUX Ver la hoja de datos (PDF) - Aeroflex UTMC

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componentes Descripción

Fabricante

5962P9960602QUX

512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.

Aeroflex UTMC 

VDD

E

DATA RETENTION MODE

50%

tEFR

VDR > 4.5V

50%

tR

Figure 7. Low VDD Data Retention Waveform (100ns)

DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(TC = 25°C, 1 Sec Data Retention Test)

SYMBOL

PARAMETER

VDR

IDDR 1

tEFR 1,2

tR1 , 2

VDD for data retention

Data retention current

Chip deselect to data retention time

Operation recovery time

Notes:

1. E = VSS, all other inputs = VDR or VSS.

2. Not guaranteed or tested.

DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(TC = 25°C, 10 Second Data Retention Test)

SYMBOL

PARAMETER

V DD 1

VDD for data retention

tEFR2, 3

Chip select to data retention time

tR2, 3

Operation recovery time

Notes:

1. Performed at VDD (min) and VDD (max).

2. E = VSS, all other inputs = VDR or VSS.

3. Not guaranteed or tested.

MINIMUM

4.5

--

0

tAVAV

MAXIMUM

--

.4

UNIT

V

mA

ns

ns

MINIMUM

4.5

0

tAVAV

MAXIMUM UNIT

5.5

V

ns

ns

11

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