SST29EE512(2005) Ver la hoja de datos (PDF) - Silicon Storage Technology

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SST29EE512
(Rev.:2005)

512 Kbit (64K x8) Page-Write EEPROM

Silicon Storage Technology 

512 Kbit Page-Write EEPROM

SST29EE512

Data Sheet

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum

Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation

of the device at these conditions or conditions greater than those defined in the operational sections of this data

sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V

Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V

Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 14.0V

Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Through Hole Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C

Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

1. Excluding certain with-Pb 32-PLCC units, all packages are 260°C capable in both non-Pb and with-Pb solder versions.

Certain with-Pb 32-PLCC package types are capable of 240°C for 10 seconds; please consult the factory for the latest information.

2. Outputs shorted for no more than one second. No more than one output shorted at a time.

OPERATING RANGE FOR SST29EE512

Range

Commercial

Industrial

Ambient Temp

0°C to +70°C

-40°C to +85°C

VDD

4.5-5.5V

4.5-5.5V

AC CONDITIONS OF TEST

Input Rise/Fall Time . . . . . . . . . . . . . . 10 ns

Output Load . . . . . . . . . . . . . . . . . . . . . 1 TTL Gate and CL = 100 pF

See Figures 13 and 14

TABLE 5: DC OPERATING CHARACTERISTICS VDD = 4.5-5.5V FOR SST29EE512

Limits

Symbol Parameter

Min Max Units Test Conditions

IDD

Power Supply Current

Read

Program and Erase

ISB1

Standby VDD Current

(TTL input)

Address input=VILT/VIHT, at f=1/TRC Min,

VDD=VDD Max

30 mA CE#=OE#=VIL, WE#=VIH, all I/Os open

50 mA CE#=WE#=VIL, OE#=VIH, VDD=VDD Max

3

mA CE#=OE#=WE#=VIH, VDD=VDD Max

ISB2

Standby VDD Current

(CMOS input)

50

µA CE#=OE#=WE#=VDD -0.3V, VDD=VDD Max

ILI

Input Leakage Current

ILO

Output Leakage Current

VIL

Input Low Voltage

VIH

Input High Voltage

VOL

Output Low Voltage

VOH

Output High Voltage

1

µA VIN=GND to VDD, VDD=VDD Max

10

µA VOUT=GND to VDD, VDD=VDD Max

0.8

V VDD=VDD Min

2.0

V VDD=VDD Max

0.4

V IOL=2.1 mA, VDD=VDD Min

2.4

V IOH=-400 µA, VDD=VDD Min

T5.2 1060

©2005 Silicon Storage Technology, Inc.

8

S71060-09-000

9/05

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