LX5512B(2004) Ver la hoja de datos (PDF) - Microsemi Corporation
Número de pieza
componentes Descripción
Fabricante
LX5512B Datasheet PDF : 6 Pages
| |||
LX5512B
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
ELECTRICAL CHARACTERISTICS
Test conditions: VC = 3.3V, VREF = 2.95V, ICQ = 65mA, TA = 25°C
Parameter
Symbol
Test Conditions
Frequency Range
Power Gain @ POUT = 19dBm
EVM @ POUT = 19dBm
Total Current @ POUT = 19dBm
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Total Current @ POUT = 23dBm
2nd Side Lobe @ 23dBm
Ramp-On Time
Differential Detector Response
f
Gp
IC_TOTAL
ICQ
IREF
S21
∆S21
∆S21
S11
S22
S12
tON
64QAM / 54Mbps
For ICQ = 65mA
Over 100MHz
0 to +85°C
POUT = 19dBm
POUT = 19dBm
11Mbps CCK
11Mbps CCK
10 ~ 90%
19dBm OFDM
Note: All measured data was obtained on a 10mil GETEK evaluation board without heat sink.
LX5512B
Min Typ Max
2.4
2.5
32
3.0
140
65
1.8
32
±0.25
±0.25
10
10
45
-40
-40
215
-55
100
1.4
Units
GHz
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
mA
dBc
ns
V
Copyright © 2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
Share Link: 