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LX1686E Datasheet PDF : 8 Pages
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LX1686E
TM
®
Digital Dimming CCFL Controller IC
PRODUCTION DATA SHEET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the operating ambient temperature -0°C ≤ TA ≤ 85°C for the LX1686E
CPW and -40°C ≤ TA ≤ 85°C for the LX1686E IPW except where otherwise noted. Test conditions: VDD = VDD_P = 3.0 to 5.5V, Ri =
40kΩ, CVCO = 0.01µF, CAFD = 0.22µF, CTRI = 0.83µF, CRAMP = 208pF, RRAMP = 15kΩ, CPD = 0.22µF, CPDB = 0.047µF, RPD = 110kΩ
Parameter
Symbol
Test Conditions
` DIGITAL DIMMING BLOCK (CONTINUED)
BRITE-to-ICOMP Propagation Delay
BRITE_POS Logic Threshold
DIG-DIM Logic Threshold
` DIRECT DRIVE PWM BLOCK
TD_BRITE
ISNS Threshold Voltage Range
VAMP Transconductance
VAMP Output Source Current
VAMP Output Sink Current
VAMP Output Voltage Range
VSNS Threshold Voltage
VCOMP Discharge Current
IAMP Transconductance
IAMP Output Source Current
IAMP Output Sink Current
IAMP Output Voltage Range
VCMP Input Offset Voltage
VCOMP-to-Output Propagation Delay
ICMP Input Offset Voltage
ICOMP-to-Output Propagation Delay
` OUTPUT BUFFER BLOCK
VR_ISNS
GM_VAMP
IS_VAMP
ISK_VAMP
VR_VAMP
VTH_VSNS
ID_VCOMP
GM_IAMP
IS_IAMP
ISK_IAMP
VR_IAMP
VOS_VCMP
TD_VCOMP
VOS_ICMP
TD_ICOMP
DIG_DIM = VDD
VCOMP = 1.25V
VCOMP = 1.5V
VCOMP = 1.5V
VCOMP = VSNS
VCOMP = 0.5V, VDD = 3V
BRITE = 0.5 – 2.6V
ICOMP = 1.5V, VDD = 3V
ICOMP = 1.5V, VDD = 3V
VCOMP = 1.25V, VDD = 3V
VDD = 3V
ICOMP = 0.5 to 2.25V, VDD = 3V
BRITE = 1.25V, RAMP_C = 2V, VDD = 3V
Output Sink Current
Output Source Current
` BIAS CONTROL BLOCK
ISK_OUTBUF
ISOUT_BUF
AOUT, BOUT = 1V, VDD = 3V
AOUT, BOUT = VDD = 3V
AOUT, BOUT = 0V, VDD = 3V
AOUT, BOUT = 2V, VDD = 3V
Voltage at Pin I_R
Pin I_R Maximum Source Current
ENABLE Logic Threshold – 3V
ENABLE Logic Threshold – 5.5V
ENABLE Threshold Hysteresis – 3V
ENABLE Threshold Hysteresis – 5.5V
VIR
IMAX_IR
VEN3V
VEN5.5
VH_EN3
VH_EN5.5
Design Reference Only
VDD = 3V
VDD = 5.5V
LX1686E
Units
Min Typ Max
300
ns
VDD/2
V
VDD/2
V
0
2.5
V
400
µmho
10
50
110
µA
15
70
120
µA
0
VDD
V
1.12 1.25 1.38
V
0.8
1.5
10
mA
70
200 700 µmho
-15
-40
-80
µA
20
60
100
µA
0
VDD
V
-10
3
10
mV
250
500
ns
-10
3
10
mV
1100
ns
20
200 mA
25
300 mA
-35
-300 mA
-20
-200 mA
.975
1.02
V
50
µA
0.8
1.4
2.0
V
0.8
1.4
2.0
V
20
mV
300
mV
Copyright © 2004
Rev. 1.1, 2006-02-27
Microsemi
Integrated Products
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
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