DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

LTC4217(RevC) Ver la hoja de datos (PDF) - Linear Technology

Número de pieza
componentes Descripción
Fabricante
LTC4217
(Rev.:RevC)
Linear
Linear Technology Linear
LTC4217 Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
LTC4217
APPLICATIONS INFORMATION
12V
VDD
OUT
R3
LTC4217FE
140k
FB
UV
GATE
VOUT
R5
150k
+
12V
0.8A
CL
R6
330μF
R1
224k
FLT
RGATE 20k
1k
OV
R2
R4
20k
20k
CGATE 12V
0.1μF
R7
10k
PG
ISET
RSET
20k
CT
0.1μF
C1
0.1μF
TIMER
INTVCC
IMON
GND
RMON
20k
ADC
4217 F01
Figure 1. 0.8A, 12V Card Resident Application
After the power-on-reset pulse, the LTC4217 will go through
the following sequence. First, the UV and OV pins must
indicate that the input voltage is within the acceptable range.
All of these conditions must be satisfied for the duration
of 100ms to ensure that any contact bounce during the
insertion has ended.
The MOSFET is turned on by charging up the GATE with a
charge pump generated current source whose value is ad-
justed by shunting a portion of the pull-up current to ground.
The charging current is controlled by the INRUSH circuit
that maintains a constant slope of GATE voltage versus time
(Figure 2). The voltage at the GATE pin rises with a slope of
0.3V/ms and the supply inrush current is set at:
IINRUSH = CL • (0.3V/ms)
This gate slope is designed to charge up a 1000μF ca-
pacitor to 12V in 40ms, with an inrush current of 300mA.
This allows the inrush current to stay under the current
limit threshold (500mA) for capacitors less than 1000μF.
Included in the Typical Performance Characteristics section
is a graph of the Safe Operating Area for the MOSFET. It is
VDD + 6.15
VDD
SLOPE = 0.3V/ms
GATE
OUT
10
t1
t2
4217 F02
Figure 2. Supply Turn-On
evident from this graph that the power dissipation at 12V,
300mA for 40ms is in the safe region.
Adding a capacitor and a 1k series resistor from GATE
to ground will lower the inrush current below the default
value set by the INRUSH circuit. The GATE is charged
with an 24μA current source (when INRUSH circuit is
not driving the GATE). The voltage at the GATE pin rises
with a slope equal to 24μA/CGATE and the supply inrush
current is set at:
IINRUSH
=
CL
CGATE
• 24µA
When the GATE voltage reaches the MOSFET threshold
voltage, the switch begins to turn on and the OUT volt-
age follows the GATE voltage as it increases. Once OUT
reaches VDD, the GATE will ramp up until clamped by the
6.15V Zener between GATE and OUT.
As the OUT voltage rises, so will the FB pin which is moni-
toring it. Once the FB pin crosses its 1.235V threshold and
the GATE to OUT voltage exceeds 4.2V, the PG pin will cease
to pull low and indicate that the power is good.
Parasitic MOSFET Oscillation
When the N-channel MOSFET ramps up the output dur-
ing power-up it operates as a source follower. The source
follower configuration may self-oscillate in the range of
25kHz to 300kHz when the load capacitance is less than
10μF, especially if the wiring inductance from the supply
to the VDD pin is greater than 3μH. The possibility of oscil-
lation will increase as the load current (during power-up)
increases. There are two ways to prevent this type of
oscillation. The simplest way is to avoid load capacitances
below 10μF. For wiring inductance larger than 20μH, the
minimum load capacitance may extend to 100μF. A second
choice is to connect an external gate capacitor CP >1.5nF
as shown in Figure 3.
Turn-Off Sequence
The switch can be turned off by a variety of conditions. A
normal turn-off is initiated by the UV pin going below its
1.235V threshold. Additionally, several fault conditions
will turn off the switch. These include an input overvoltage
4217fc

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]