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LTC4217(RevC) Ver la hoja de datos (PDF) - Linear Technology

Número de pieza
componentes Descripción
Fabricante
LTC4217
(Rev.:RevC)
Linear
Linear Technology Linear
LTC4217 Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
LTC4217
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VDD = 12V unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNITS
Inputs
IIN
OV, UV, FB Pin Input Current
VIN = 1.2V, LTC4217
l
0
±1
μA
RIN
OV, UV, FB Pin Input Resistance
LTC4217-12
l 13
18
23
kΩ
VTH
OV, UV, FB Pin Threshold Voltage
VIN Rising
l 1.21 1.235 1.26
V
ΔVOV(HYST)
OV Pin Hysteresis
l 10
20
30
mV
ΔVUV(HYST)
UV Pin Hysteresis
l 50
80
110
mV
VUV(RTH)
UV Pin Reset Threshold Voltage
VUV Falling
l 0.55 0.62
0.7
V
ΔVFB(HYST)
FB Pin Power Good Hysteresis
l 10
20
30
mV
RISET
ISET Pin Output Resistor
l 19.5
20
20.5
kΩ
Outputs
VOL
PG, FLT Pin Output Low Voltage
IOUT = 2mA
IOH
PG, FLT Pin Input Leakage Current
VOUT = 30V
l
0.4
0.8
V
l
0
±10
μA
VTIMER(H)
TIMER Pin High Threshold
VTIMER Rising
l 1.2 1.235 1.28
V
VTIMER(L)
TIMER Pin Low Threshold
VTIMER Falling
l 0.1
0.21
0.3
V
ITIMER(UP)
TIMER Pin Pull-Up Current
VTIMER = 0V
l –80 –100 –120
μA
ITIMER(DN)
TIMER Pin Pull-Down Current
VTIMER = 1.2V
l 1.4
2
2.6
μA
ITIMER(RATIO)
TIMER Pin Current Ratio ITIMER(DN)/ITIMER(UP)
l 1.6
2
2.7
%
AIMON
IMON Pin Current Gain
IOUT = 2A
l 47.5
50
52.5
μA/A
IOFF(IMON)
IMON Pin Offset Current
IOUT = 132mA
l
0
±7.5
μA
IGATE(UP)
Gate Pull-Up Current
Gate Drive On, VGATE = VOUT = 12V
l –19
–24
–29
μA
IGATE(DN)
Gate Pull-Down Current
Gate Drive Off, VGATE = 18V, VOUT = 12V l 190
250
340
μA
IGATE(FST)
Gate Fast Pull-Down Current
Fast Turn Off, VGATE = 18V, VOUT = 12V
140
mA
AC Characteristics
tPHL(GATE)
Input High (OV), Input Low (UV) to Gate Low VGATE < 16.5V Falling
Propagation Delay
l
8
10
μs
tPHL(ILIM)
Short-Circuit to Gate Low
tD(ON)
tD(CB)
tD(AUTO-RETRY)
Turn-On Delay
Circuit Breaker Filter Delay Time (Internal)
Auto-Retry Turn-On Delay (Internal)
VFB = 0, Step ISENSE to 1.2A,
VGATE < 16.5V Falling
Step VUV to 2V, VGATE > 13V
VFB = 0V, Step ISENSE to 1.2A
l
1
5
μs
l 50
100
150
ms
l 1.5
2
2.7
ms
l 50
100
150
ms
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into pins are positive, all voltages are referenced to
GND unless otherwise specified.
Note 3: An internal clamp limits the GATE pin to a maximum of 6.5V
above OUT. Driving this pin to voltages beyond the clamp may damage the
device.
Note 4: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
Note 5: TJ is calculated from the ambient temperature, TA, and power
dissipation, PD, according to the formula:
LTC4217DHC, LTC4217DHC-12: TJ = TA + (PD • 43°C/W)
LTC4217FE: TJ = TA + (PD • 38°C/W)
Note 6: For the DHC package, switch on-resistance is guaranteed by
design and test correlation.
4217fc
4

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