BUL69 Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc

Número de pieza

componentes Descripción

Fabricante

BUL69

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

Semelab - > TT Electronics plc  

SEME

LAB

MECHANICAL DATA

Dimensions in mm

0.32

0.24

16°

max.

0.10

0.02

13°

1.70

max.

10°

max.

6.7

6.3

3.1

2.9

4

3.7 7.3

3.3 6.7

123

1.05

0.80

0.85

2.30

0.60

4.60

SOT-223

Pin 1 - Base

Pin 2 - Collector

Pin 3 - Emitter

Pin 4 - Collector

BUL70A

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

HIGH SPEED NPN

SILICON POWER TRANSISTOR

Designed for use in

electronic ballast applications

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

• FAST SWITCHING

• HIGH ENERGY RATING

• SURFACE MOUNT FOOT PRINT

FEATURES

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

• Triple Guard Rings for improved control of

high voltages.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage(IE=0)

1000V

VCEO

Collector – Emitter Voltage (IB = 0)

500V

VEBO

Emitter – Base Voltage (IC = 0)

10V

IC

Continuous Collector Current

4A

IC(PK)

Peak Collector Current

7A

IB

Base Current

2A

Ptot

Total Dissipation at Tcase = 25°C

3W

Tstg

Operating and Storage Temperature Range

–55 to +150°C

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 2/97

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