BUL64A Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc

Número de pieza

componentes Descripción

Fabricante

BUL64A

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

Semelab - > TT Electronics plc  

SEME

LAB

BUL64A

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

VCEO(sus)

V(BR)CBO

V(BR)EBO

ICBO

ICEO

IEBO

hFE*

VCE(sat)*

VBE(sat)*

ft

Cob

ELECTRICAL CHARACTERISTICS

Collector – Emitter Sustaining Voltage IC = 10mA

Collector – Base Breakdown Voltage IC = 1mA

Emitter – Base Breakdown Voltage IE = 1mA

Collector – Base Cut–Off Current

VCB = 1000V

Collector – Emitter Cut–Off Current

Emitter Cut–Off Current

DC Current Gain

IB = 0

VEB = 9V

IC = 0

IC = 0.1A

IC = 0.5A

IC = 1A

IC = 100mA

Collector – Emitter Saturation Voltage IC = 0.5A

IC = 1A

Base – Emitter Saturation Voltage

IC = 0.5A

IC = 1A

DYNAMIC CHARACTERISTICS

Transition Frequency

IC = 0.2A

Output Capacitance

VCB = 20V

TC = 125°C

VCE = 500V

TC = 125°C

VCE = 5V

VCE = 5V

VCE = 1V

TC = 125°C

IB = 20mA

IB = 0.1A

IB = 0.2A

IB = 0.1A

IB = 0.2A

VCE = 4V

f = 1MHz

500

1000

10

20

12

5

* Pulse test tp = 300µs , δ < 2%

Typ.

30

15

8

0.05

0.15

0.3

0.8

0.9

20

20

Max. Unit

V

10

µA

100

100 µA

10

µA

100

—

0.1

0.2

V

0.5

1.0

V

1.1

MHz

pF

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 3/95

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