VUM33-05 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
VUM33-05 Datasheet PDF : 4 Pages
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VUM 33-05
40
TVJ=100°C
A VR= 350 V
30
IRM
20
IF = 37 A
IF = 74 A
IF = 37 A
IF = 18.5 A
max.
10
typ.
0
0 100 200 300 400 A50/m0s 600
-diF/dt
Fig. 12 Peak reverse current versus
-diF/dt (Boost Diode)
1.4
1.2
Kt
1.0
0.8
0.6
IRM
Qr
0.4
20 40 60 80 100 120 1°4C0 160
TVJ
Fig. 13 Dynamic parameters versus
junction temperature (Boost Diode)
0.6
µs
0.5
trr
0.4
0.3
0.2
TVJ=100°C
VR= 350 V
max.
IF = 37 A
IF = 74 A
IF = 37 A
IF = 18.5 A
0.1
typ.
0.0
0
100 200 300 400 5A0/m0s 600
-diF/dt
Fig. 14 Recovery time versus
-diF/dt (Boost Diode)
18
V
16
14
VFR
12
10
8
6
4
12
kW TS =85°C
10
kW TS =85°C
10
Pout
Vin = 230 V/50 Hz
8
Pout
fc = 40 kHz
VFR
8
6
6
4
4
Vin = 115 V/60 Hz
fc = 80 kHz
tFR
2
2
2
0 100 200 300 400 A5/0m0s 600
diF/dt
Fig. 15 Peak forward voltage versus
-diF/dt (Boost Diode)
0
0 20 40 60 80 1k0H0z 120
fc
Fig. 16 Output power versus carrier
frequency (Module)
0
0 50 100 150 20V0 250
Vin (RMS)
Fig. 17 Output power versus
mains voltage
9
kW
8
7
Pout 6
5
fc = 80 kHz
Vin = 230 V/50 Hz
1.5
VUM 33
K/W
1.2
ZthJC
0.9
Rectifier Diodes
Boost Diode
4
Vin = 115 V/60 Hz
0.6
3
2
0.3
1
MOSFET
0
0.0
40
60
80 100 °C 120
0.01
0.1
TS
1
s
10
t
Fig. 18 Output power versus
heatsink temperature (Module)
Fig. 19 Transient thermal impedance junction to case for all devices
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4-4
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