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VP2450N3 Ver la hoja de datos (PDF) - Supertex Inc

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Fabricante
VP2450N3 Datasheet PDF : 4 Pages
1 2 3 4
Thermal Characteristics
VP2450
Package
TO-92
ID (continuous)*
-0.1A
ID (pulsed)
-0.3A
Power Dissipation
@ TC = 25°C
1W
θjc
°C/W
125
TO-243AA
-0.16A
-0.80A
1.6W
15
* ID (continuous) is limited by max rated Tj.
Mounted on FR5 Board. 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
θja
°C/W
170
78
IDR*
-0.1A
-0.16A
IDRM
-0.3A
-0.80A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
Parameter
Drain-to-Source
Breakdown Voltage
Min Typ Max Unit
-500
V
Conditions
VGS = 0V, ID = -250µA
VGS(th)
Gate Threshold Voltage
-1.5
VGS(th)
Change in VGS(th) with Temperature
IGSS
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
-3.5
-4.8
-100
-10
-1
V
mV/°C
nA
µA
mA
ID(ON)
RDS(ON)
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
-75
-200
35
30
RDS(ON) Change in RDS(ON) with Temperature
0.75
GFS
Forward Transconductance
150 320
CISS
Input Capacitance
190
COSS
Common Source Output Capacitance
75
CRSS
Reverse Transfer Capacitance
20
td(ON)
Turn-ON Delay Time
10
tr
Rise Time
25
td(OFF)
Turn-OFF Delay Time
45
tf
Fall Time
25
VSD
Diode Forward Voltage Drop
-1.8
trr
Reverse Recovery Time
300
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
mA
%/°C
m
pF
ns
V
ns
VGS = VDS, ID = -1mA
VGS = VDS, ID = -1mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = -4.5V, VDS = -15V
VGS = -10V, VDS = -15V
VGS = -4.5V, ID = -50mA
VGS = -10V, ID = -100mA
VGS = -10V, ID = -100mA
VDS = -15V, ID = -100mA
VGS = 0V, VDS =- 25V
f = 1 MHz
VDD = -25V
ID = -200mA
RGEN = 25
VGS = 0V, ISD = -100mA
VGS = 0V, ISD = -100mA
Switching Waveforms and Test Circuit
0V
INPUT
-10V
0V
OUTPUT
VDD
10%
t(ON)
td(ON)
tr
90%
t(OFF)
td(OFF)
tF
90%
90%
10%
10%
2
PULSE
GENERATOR
Rgen
INPUT
D.U.T.
OUTPUT
RL
VDD

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