IXHQ100PI Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXHQ100PI Datasheet PDF : 9 Pages
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IXHQ 100PI
IXHQ 100SI
Electrical Characteristics (continued)
Symbol
Parameter
Test Conditions
Min
R
VCL
t
OC
dvGATE/dt
VGATE
I
GATE
I
GATE
V
DD
IRSTout
tRST
Vad
VCL bias resistance
Overcurrent detection
to GATE output delay
GATE output slew rate
Maximum GATE
output voltage
GATE pull-up current
GATE pull-down
current
V regulator output
DD
Voltage
RSTout drive current
RST pulse width
Auto-Detect threshold
4
V = 0 V; V = 5 V
CAPin
OUTsns
VSOURCE input is a step at t = 0s
from 0 V to 200 mV
CSLOPE= 100 nF
0.5
VCAPin
V
=
0
=
V; R
5 V load
=
10
KΩ
OUTsns
Gate drive on, V = 0 V
GATE
Gate drive off
10
VGATE = 10 V
3.3K Resistive load
5
between VDD output and AGND
Force VRSTout =1 V during fault condition 2.4
200
Gate drive on; ramp VOUTsns; monitor
-10
RST until it pulses.
Typ Max Units
6
10 kΩ
20
30 ms
0.8 1.1 V/ms
13.8 15
V
-15 -10 mA
20
mA
5.75 6.5 V
3
3.6 mA
500 1000 ns
12
20 mV
Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent damage to the
device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific
performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum
rated conditions for extended periods may affect device reliability.
Note2: All voltages are relative to ground unless otherwise specified.
Typical Performance Characteristics
Graph 1: Icc vs. Temperature
2.18
2.16
2.14
2.12
2.10
2.08
2.06
2.04
2.02
2.00
1.98
1.96
-60 -40 -20 0 20 40 60 80 100
Temperature (oC)
Graph 2: Regulator Output Voltage vs. Temperature
6.0
5.9
5.8
5.7
5.6
5.5
5.4
-60 -40 -20 0 20 40 60 80 100
Temperature (oC)
3
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