IXFN80N50 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

IXFN80N50

HiPerFET™ Power MOSFETs Single Die MOSFET

IXYS CORPORATION 

IXFN 75N50

IXFN 80N50

Figure 7. Gate Charge

10

VDS = 250 V

8

ID = 40 A

IG = 10 mA

6

4

2

0

0 50 100 150 200 250 300 350 400

Gate Charge - nC

Figure 8. Capacitance Curves

30000

10000

Ciss

f = 100kHz

Coss

1000

Crss

100

0

5 10 15 20 25 30 35 40

VDS - Volts

Figure 9. Forward Voltage Drop of the Intrinsic Diode

100

VGS = 0V

80

TJ = 125OC

60

40

TJ = 25OC

20

0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Volts

Figure 10. Transient Thermal Resistance

1.000

0.100

0.010

Single Pulse

0.001

10-4

10-3

10-2

10-1

100

101

Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025

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