IXFN75N50 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFN75N50 Datasheet PDF : 4 Pages
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IXFN 75N50
IXFN 80N50
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 15 V; ID = 0.5 • ID25, pulse test
50
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 Ω (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
70
S
9890
pF
1750
pF
460
pF
61
ns
70
ns
102
ns
27
ns
380
nC
80
nC
173
nC
0.18 K/W
0.05
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I
V =0V
S
GS
75N50
80N50
75 A
80 A
ISM
Repetitive;
75N50
pulse width limited by TJM 80N50
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
300 A
320 A
1.3 V
trr
IF = 30A, -di/dt = 100 A/µs, VR = 100 V
QRM
I
RM
250 ns
1.2
µC
8
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
38.00
30.30
38.23
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.496
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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