IXFN75N50 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFN75N50 Datasheet PDF : 4 Pages
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HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFN 80N50
IXFN 75N50
D
G
VDSS
500 V
500 V
ID25
80 A
75 A
RDS(on)
50 mΩ
55 mΩ
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
I
DM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Md
Weight
Symbol
VDSS
VGH(th)
IGSS
I
DSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
S
S
Maximum Ratings
500
V
500
V
±20
V
±30
V
75N50
75
A
80N50
80
A
75N50
300
A
80N50
320
A
80
A
64
mJ
6
J
5 V/ns
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Test Conditions
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500
2
TJ = 25°C
TJ = 125°C
80N50
75N50
V
4V
±200 nA
100 µA
2 mA
50 mΩ
55 mΩ
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
Features
• Internationalstandardpackages
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Ruggedpolysilicongatecellstructure
• Unclamped Inductive Switching (UIS)
rated
• Lowpackageinductance
• FastintrinsicRectifier
Applications
• DC-DC converters
• Batterychargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperatureandlightingcontrols
Advantages
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
98538C (02/02)
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