IXFN80N50(2003) Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

IXFN80N50
(Rev.:2003)

HiPerFET™ Power MOSFETs Single Die MOSFET

IXYS CORPORATION 

10

VDS = 250 V

8

ID = 40 A

IG = 10 mA

6

4

2

0

0 50 100 150 200 250 300 350 400

Gate Charge - nC

Fig. 7 Gate Charge Characteristic Curve

100

80

60

VGS = 0V

TJ = 125OC

40

TJ = 25OC

20

0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Volts

Fig. 9. Source-to-Drain Voltage Drop

1.000

30000

10000

1000

IXFN 80N50

Ciss

Coss

f = 100kHz

Crss

100

0 5 10 15 20 25 30 35 40

VDS - Volts

Fig. 8 Capacitance Curves

0.100

0.010

Single Pulse

0.001

10-4

10-3

10-2

10-1

100

101

Fig.10. Transient Thermal Resistance

Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

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