IXTC13N50 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTC13N50 Datasheet PDF : 2 Pages
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IXTC 13N50
Symbol
gfs
Ciss
Coss
C
rss
td(on)
tr
td(off)
t
f
Qg(on)
Qgs
Qgd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0; IT Notes 1, 2
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS,
ID = 0.5 ID25, RG = 4.7 Ω (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
7.5 9.0
S
2800
pF
300
pF
70
pF
18 30 ns
27 40 ns
76 100 ns
32 60 ns
110 120 nC
15 25 nC
40 50 nC
0.90 K/W
0.30
K/W
ISOPLUS220 OUTLINE
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Note 1
trr
IF = IS
-di/dt = 100 A/µs,
VR = 100 V
13 A
52 A
1.5 V
600 ns
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT test current: IT = 6.5A
3. See IXTH12N50A data sheet for characteristic curves.
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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