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TC1263

500mA Fixed Output CMOS LDO with Shutdown

Microchip Technology 

TC1263

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Input Voltage .........................................................6.5V

Output Voltage.................. (VSS – 0.3V) to (VIN + 0.3V)

Power Dissipation................Internally Limited (Note 6)

Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V

Operating Temperature Range...... -40°C < TJ < 125°C

Storage Temperature.......................... -65°C to +150°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC1263 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface

type specifications apply for junction temperatures of -40°C to +125°C.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VIN

IOUTMAX

VOUT

Input Operating Voltage

Maximum Output Current

Output Voltage

∆VOUT/∆T

∆VOUT/∆VIN

∆VOUT/VOUT

VIN-VOUT

VOUT Temperature Coefficient

Line Regulation

Load Regulation

Dropout Voltage

IDD

ISHDN

PSRR

Supply Current

Shutdown Supply Current

Power Supply Rejection Ratio

IOUTSC

∆VOUT/∆PD

eN

Output Short Circuit Current

Thermal Regulation

Output Noise

SHDN Input

VIH

SHDN Input High Threshold

VIL

SHDN Input Low Threshold

ERROR Output (SOIC Only)

VMIN

VOL

VTH

VHYS

Minimum Operating Voltage

Output Logic Low Voltage

ERROR Threshold Voltage

ERROR Positive Hysteresis

2.7

500

—

VR – 2.5%

—

—

—

—

—

—

—

—

—

—

—

—

—

—

VR ±0.5%

—

40

0.05

0.002

20

60

200

350

80

0.05

64

1200

0.04

260

6.0

—

—

VR + 2.5%

—

0.35

0.01

30

130

390

650

130

1

—

1400

—

—

V

mA

V

ppm/°C

%

%/mA

mV

µA

µA

dB

mA

V/W

nV/√Hz

Note 8

Note 1

Note 2

(VR + 1V) ≤ VIN ≤ 6V

IL = 0.1mA to IOUTMAX (Note 3)

IL = 100µA

IL = 100mA

IL = 300mA

IL = 500mA (Note 4)

SHDN = VIH, IL = 0

SHDN = 0V

FRE ≤ 1kHz

VOUT = 0V

Note 5

IL = IOUTMAX

60

—

—

%VIN

—

—

15

%VIN

1.0

—

—

—

—

400

—

0.95 x VR

—

—

50

—

V

mV 1 mA Flows to ERROR

V

mV Note 7

Note 1: VR is the regulator output voltage setting.

2: TC VOUT = (VOUTMAX – VOUTMIN) x 106

VOUT x ∆T

3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range

from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal

regulation specification.

4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V

differential.

5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or

line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the

thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate

thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.

7: Hysteresis voltage is referenced to VR.

8: The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to IOUTMAX.

DS21374B-page 2

© 2002 Microchip Technology Inc.

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