DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BT139X-500H Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza
componentes Descripción
Fabricante
BT139X-500H
Philips
Philips Electronics Philips
BT139X-500H Datasheet PDF : 6 Pages
1 2 3 4 5 6
Philips Semiconductors
Triacs
high noise immunity
Product specification
BT139X series H
25 Ptot / W
20
15
10
BT139
1
Ths(max) / C 25
= 180
45
120
90
60
65
30
85
5
105
0
125
0
5
10
15
20
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000 ITSM / A
BT139
100
dIT/dt limit
T2- G+ quadrant
IT
ITSM
T
time
10
10us
100us
Tj initial = 25 C max
1ms
10ms
100ms
T/s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp 20ms.
150 ITSM / A
100
BT139
IT
ITSM
T
time
Tj initial = 25 C max
50
01
10
100
1000
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
20
15
BT139X
38 C
10
5
0-50
0
50
100
150
Ths / C
Fig.4. Maximum permissible rms current IT(RMS) ,
versus heatsink temperature Ths.
50 IT(RMS) / A
BT139
40
30
20
10
0
0.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths 38˚C.
VGT(Tj)
1.6 VGT(25 C)
BT136
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.200

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]