BT139X-500H Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BT139X-500H Datasheet PDF : 6 Pages
| |||
Philips Semiconductors
Triacs
high noise immunity
Product specification
BT139X series H
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Thermal resistance
junction to heatsink
Rth j-a
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN. TYP. MAX. UNIT
-
-
4.0 K/W
-
-
5.5 K/W
-
55
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT
Gate trigger current
IL
Latching current
IH
Holding current
VT
On-state voltage
VGT
Gate trigger voltage
ID
Off-state leakage current
CONDITIONS
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
IT = 20 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
MIN. TYP. MAX. UNIT
10 14 50 mA
10 17 50 mA
10 18 50 mA
10 40 100 mA
-
10 60 mA
-
25 90 mA
-
12 60 mA
-
14 90 mA
-
8
60 mA
-
1.2 1.6 V
-
0.7 1.5 V
0.25 0.4
-
V
-
0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
dVcom/dt
tgt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 16 A;
dIcom/dt = 7.2 A/ms; gate open circuit
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
MIN.
200
10
-
TYP. MAX. UNIT
500
- V/µs
20
- V/µs
2
-
µs
September 1997
2
Rev 1.200
Share Link: 