LNA2902L Ver la hoja de datos (PDF) - Panasonic Corporation
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LNA2902L Datasheet PDF : 4 Pages
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Infrared Light Emitting Diodes
LNA2902L (LN66A(L))
GaAs infrared light emitting diode
For optical control systems
I Features
• High-power output, high-efficiency: Ie = 9 mW/sr (min.)
• Emitted light spectrum is suited for silicon photodetectors
• Good radiant power output linearity with respect to input current
• Wide directivity: θ = 20° (typ.)
• Transparent epoxy resin package
• Long lead-wire type
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Power dissipation
PD
160
mW
Forward current (DC)
IF
100
mA
Pulse forward current *
IFP
1.5
A
Reverse voltage (DC)
VR
3
V
Operating ambient temperature Topr
−25 to +85
°C
Storage temperature
Tstg
−40 to +100
°C
Note) *: Less than f = 100 Hz, duty cycle = 0.1%
φ5.0±0.2
Unit: mm
φ6.0±0.2
2-0.8 max. 0.5±0.15
2-0.5±0.15
2.54
12
1: Anode
2: Cathode
I Electro-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Radiant intensity
Ie
Total power output
PO
Peak emission wavelength
λP
Spectral band width
∆λ
Forward voltage
VF
Pulse forward voltage *1
VFP
Reverse current
IR
Total capacitance between terminals
Ct
Beal angle at 50% axial intensity
θ
Cut-off frequency *2
fC
IF = 50 mA
9.0
mW/sr
IF = 50 mA
12.0
mW
IF = 50 mA
950
nm
IF = 50 mA
50
nm
IF = 100 mA
1.4 1.6
V
IFP = 1.0 A
3.0
V
VR = 3 V
10
µA
VR = 0 V, f = 1 MHz
35
pF
The angle when the beam intensity is
20
°
halved.
1
MHz
Note) *1: Less than f = 100 Hz, duty cycle = 0.1%
*2:
Cut-off
frequency
fC:
10
×
log
PO
PO at
at f = fC
f = 50 kHz
= −3
Publication date: October 2001
Note) The part number in the parenthesis shows conventional part number.
SHC00039AED
1
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