LN66A(2009) Ver la hoja de datos (PDF) - Panasonic Corporation
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LN66A Datasheet PDF : 5 Pages
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This product complies with the RoHS Directive (EU 2002/95/EC).
Infrared Light Emitting Diodes
LNA2902L (LN66A(L))
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency: Ie = 9 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors
Good radiant power output linearity with respect to input current
Wide directivity: θ = 20° (typ.)
Transparent epoxy resin package
Long lead wire type
/ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Power dissipation
PD
160
mW
n d ge. ed Forward current
le sta ntinu Pulse forward current *
IF
100
mA
IFP
1.5
A
a elifecyc disco Reverse voltage
VR
3
V
n u t ed, Operating ambient temperature
Topr
–25 to +85
°C
roduc d typ Storage temperature
Tstg –40 to +100 °C
te tin ur P tinue Note) *: f = 100 Hz, Duty cycle = less than 0.1%
ing fo iscon Electrical-Optical Characteristics Ta = 25°C±3°C
in n llow d d Parameter
Symbol
Conditions
Min Typ Max
s fo lane Radiant power
a o clude pe, p Reverse current
PO IF = 50 mA
IR VR = 3 V
12.0
10
c d in e ty Forward voltage
tinue nanc Pulse forward voltage *
VF IF = 100 mA
VFP IFP = 1.0 A
1.4
1.6
3.0
M is iscon ainte Center radiant intensity
e/D e, m Terminal capacitance
D anc typ Peak emission wavelength
Ie IF = 50 mA
Ct VR = 0 V, f = 1 MHz
λP IF = 50 mA
9.0
35
950
inten ance Spectral half band width
Δλ IF = 50 mA
50
Ma inten Half-power angle
θ The angle when the radiant power is halved.
20
ma Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
ed 2. Cutoff frequency: 1 MHz
(plan PO at f = fC
fC : 10 × log
= −3
Unit
mW
µA
V
V
mW/sr
pF
nm
nm
°
PO at f = 50 kHz
3. *: f = 100 Hz, Duty cycle = less than 0.1%
Publication date: November 2009
Note) The part number in the parenthesis shows conventional part number.
SHC00039DED
1
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