BR101 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BR101 Datasheet PDF : 8 Pages
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Philips Semiconductors
Silicon controlled switch
Product specification
BR101
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
NPN transistor
ICER
IEBO
VCEsat
VBEsat
hFE
fT
Cc
Ce
collector cut-off current
VCE = 50 V; RBE = 10 kΩ
−
VCE = 50 V; RBE = 10 kΩ; Tj = 150 °C −
emitter cut-off current
IC = 0; VEB = 5 V; Tj = 150 °C
−
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA
−
base-emitter saturation voltage IC = 10 mA; IB = 1 mA
−
DC current gain
IC = 10 mA; VCE = 2 V
50
transition frequency
IC = 10 mA; VCE = 2 V
−
collector capacitance
IE = ie = 0; VCB = 20 V; f = 1 MHz
−
emitter capacitance
IC = ic = 0; VEB = 1 V
−
−
500 nA
−
50 µA
−
50 µA
−
500 mV
−
900 mV
−
−
300 −
MHz
−
5
pF
−
25 pF
PNP transistor
ICEO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
IB = 0; VCE = −50 V; Tj = 150 °C
IC = 0; VEB = −50 V; Tj = 150 °C
IE = 1 mA; VCB = 0 V
−
−
−
−
0.25 −
−50 µA
−50 µA
2.5
Combined device
VAK
forward on-state voltage
IH
holding current
RKG-K = 10 kΩ
IA = 50 mA; IAG = 0
IA = 1 mA; IAG = 10 mA
RKG-K = 10 kΩ; IAG = 10 mA;
VBB = −2 V
−
−
1.4 V
−
−
1.2 V
−
−
1
mA
1997 Jul 24
5
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